The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jun. 26, 2008
Applicants:
Huai-ying Huang, Jhonghe, TW;
Yu-kuan Lin, Taipei, TW;
Sheng Chiang Hung, Hsinchu, TW;
Ping-wei Wang, Hsin-Chu, TW;
Inventors:
Huai-Ying Huang, Jhonghe, TW;
Yu-Kuan Lin, Taipei, TW;
Sheng Chiang Hung, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention discloses a static random access memory (SRAM) cell comprising a pair of cross-coupled inverters connected between a positive supply voltage (Vcc) and a first node, a first NMOS transistor with a gate and drain connected to the first node and a source connected to a ground, and a second NMOS transistor with a drain and source connected to the first node and the ground, respectively, and a gate connected to a control-line.