The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Dec. 28, 2007
Yih-yuh Doong, Hsin-Chu, TW;
Keh-jeng Chang, Hsin-Chu, TW;
Yuh-jier Mii, Hsin-Chu, TW;
Sally Liu, Hsin-Chu, TW;
Lien Jung Hung, Taipei, TW;
Victor Chih Yuan Chang, Hsin-Chu, TW;
Yih-Yuh Doong, Hsin-Chu, TW;
Keh-Jeng Chang, Hsin-Chu, TW;
Yuh-Jier Mii, Hsin-Chu, TW;
Sally Liu, Hsin-Chu, TW;
Lien Jung Hung, Taipei, TW;
Victor Chih Yuan Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.