The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Aug. 01, 2005
Tetsuya Nishiguchi, Shizuoka, JP;
Shingo Ichimura, Ibaraki, JP;
Hidehiko Nonaka, Ibaraki, JP;
Yoshiki Morikawa, Shizuoka, JP;
Takeshi Noyori, Shizuoka, JP;
Mitsuru Kekura, Shizuoka, JP;
Tetsuya Nishiguchi, Shizuoka, JP;
Shingo Ichimura, Ibaraki, JP;
Hidehiko Nonaka, Ibaraki, JP;
Yoshiki Morikawa, Shizuoka, JP;
Takeshi Noyori, Shizuoka, JP;
Mitsuru Kekura, Shizuoka, JP;
Meidensha Corporation, Tokyo, JP;
Abstract
An oxide film forming equipment is provided with a reactorin which a heater unitholding a substrateis stored, a pipingprovided with a material gas introducing valve Vfor introducing a material gas containing organic silicon or organic metal into the reactor, a pipingprovided with an ozone containing gas introducing valve Vfor introducing an ozone containing gas into the reactor, and a pipingprovided with an exhaustion valvefor exhausting a gas in the reactor. When the material gas introducing valve V, the ozone containing gas introducing valve V, and the exhaustion valve Vperform open-and-closure operations to alternately supply the material gas and the ozone containing gas into the reactor, the ozone containing gas introducing valve Voperates to fall an ozone concentration of the ozone containing gas in a range from 0.1 vol % to 100 vol % and the heater unit adjusts a temperature of the substrate from a room temperature to 400° C.