The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2010

Filed:

Feb. 24, 2006
Applicants:

Francois J. Henley, Aptos, CA (US);

Harry Robert Kirk, Campbell, CA (US);

James Andrew Sullivan, Woodside, CA (US);

Inventors:

Francois J. Henley, Aptos, CA (US);

Harry Robert Kirk, Campbell, CA (US);

James Andrew Sullivan, Woodside, CA (US);

Assignee:

Silicon Genesis Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.


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