The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Feb. 22, 2007
Tae Won Kim, San Jose, CA (US);
Kyeong-tae Lee, San Jose, CA (US);
Alexander Paterson, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Shashank C. Deshmukh, San Jose, CA (US);
Tae Won Kim, San Jose, CA (US);
Kyeong-Tae Lee, San Jose, CA (US);
Alexander Paterson, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Shashank C. Deshmukh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.