The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2010

Filed:

May. 21, 2008
Applicants:

Fethi Dhaoui, Patterson, CA (US);

Zhigang Wang, Sunnyvale, CA (US);

John Mccollum, Saratoga, CA (US);

Richard Chan, Los Altos, CA (US);

Vidyadhara Bellippady, San Jose, CA (US);

Inventors:

Fethi Dhaoui, Patterson, CA (US);

Zhigang Wang, Sunnyvale, CA (US);

John McCollum, Saratoga, CA (US);

Richard Chan, Los Altos, CA (US);

Vidyadhara Bellippady, San Jose, CA (US);

Assignee:

Actel Corporation, Mountain View, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/094 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radiation-tolerant flash-based FPGA switching element includes a plurality of memory cells each having a memory transistor and a switch transistor sharing a floating gate. Four such memory cells are combined such that two sets of two switch transistors are wired in series and the two sets of series-wired switch transistors are also wired in parallel. The four memory transistors associated with the series-parallel combination of switch transistors are all programmed to the same on or off state. The series combination prevents an 'on' radiation-hit fault to one of the floating gates from creating a false connection and the parallel combination prevents an 'off' radiation-hit fault to one of the floating gates from creating a false open circuit.


Find Patent Forward Citations

Loading…