The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Jul. 09, 2008
Eric Huang, Jhubei, TW;
Tsung-yi Huang, Hsin-Chu, TW;
Fu-hsin Chen, Jhudong Township, TW;
Chyi-chyuan Huang, Taipei, TW;
Puo-yu Chiang, Su-ao Township, TW;
Eric Huang, Jhubei, TW;
Tsung-Yi Huang, Hsin-Chu, TW;
Fu-Hsin Chen, Jhudong Township, TW;
Chyi-Chyuan Huang, Taipei, TW;
Puo-Yu Chiang, Su-ao Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW; and a tunnel of the first conductivity type in the pre-HVW and the HVW, and electrically connecting the field ring and the semiconductor substrate.