The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Dec. 04, 2008
Suresh Lakkapragada, Santa Clara, CA (US);
Kyle A. Brown, San Diego, CA (US);
Matt Hankinson, San Jose, CA (US);
Ady Levy, Sunnyvale, CA (US);
Suresh Lakkapragada, Santa Clara, CA (US);
Kyle A. Brown, San Diego, CA (US);
Matt Hankinson, San Jose, CA (US);
Ady Levy, Sunnyvale, CA (US);
KLA-Tencor Technologies Corp., Milpitas, CA (US);
Abstract
Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.