The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Sep. 29, 2008
Frank Bin Yang, Mahwah, NY (US);
Rohit Pal, Fishkill, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Frank Bin Yang, Mahwah, NY (US);
Rohit Pal, Fishkill, NY (US);
Michael J. Hargrove, Clinton Corners, NY (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate electrode, depositing a stress-inducing layer overlying the gate electrode, annealing the silicon-comprising substrate to recrystallize the gate electrode, removing the stress-inducing layer, etching recesses into the substrate using the gate electrode as an etch mask, and epitaxially growing impurity-doped, silicon-comprising regions in the recesses.