The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Jul. 30, 2007
Jean Wang, Hsin-Chu, TW;
Francis Ko, Taichung, TW;
Henry Lo, Hsiu-Chu, TW;
Chi-chun Hsieh, Tongluo, TW;
Amy Wang, Taipei, TW;
Chih-wei Lai, Hsin-Chu, TW;
Chun-hsien Lin, Hsin-Chu, TW;
Jean Wang, Hsin-Chu, TW;
Francis Ko, Taichung, TW;
Henry Lo, Hsiu-Chu, TW;
Chi-Chun Hsieh, Tongluo, TW;
Amy Wang, Taipei, TW;
Chih-Wei Lai, Hsin-Chu, TW;
Chun-Hsien Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for improving within-wafer uniformity is provided. The method includes forming an electrical component by a first process step and a second process step, wherein the electrical component has a target electrical parameter. The method includes providing a first plurality of production tools for performing the first process step; providing a second plurality of production tools for performing the second process step; providing a wafer; performing the first process step on the wafer using one of the first plurality of production tools; and selecting a first route including a first production tool from the second plurality of production tools. A within-wafer uniformity of the target electrical parameter on the wafer manufactured by the first route is greater than a second route including a second production tool in the second plurality of production tools.