The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7767386 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 03, 2010

Filed:

Jan. 15, 2007
Applicant:

Shannon W. Dunn, Altamont, NY (US);

Inventor:

Shannon W. Dunn, Altamont, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming a developable organic planarization layer (OPL) on the thin film, forming a developable anti-reflective coating (ARC) layer on the developable OPL, and forming a mask layer on the developable ARC layer. Thereafter, the mask layer, the developable ARC layer and the developable OPL are patterned to form a pattern therein using an imaging and developing process. The imaging and developing process may either partially extend or fully extend into the OPL. Once the mask layer is removed, the pattern is transferred to the underlying thin film using an etching process.


Find Patent Forward Citations

Dunn, Shannon. (2010). Method of patterning an organic planarization layer (U.S. Patent No. 7767386). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7767386

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