The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Apr. 19, 2007
Avinash K. Gupta, Basking Ridge, NJ (US);
Ilya Zwieback, Washington Township, NJ (US);
Jihong Chen, Cincinnati, OH (US);
Marcus Getkin, Flanders, NJ (US);
Walter R. M. Stepko, Clover, SC (US);
Edward Semenas, Allentown, PA (US);
Avinash K. Gupta, Basking Ridge, NJ (US);
Ilya Zwieback, Washington Township, NJ (US);
Jihong Chen, Cincinnati, OH (US);
Marcus Getkin, Flanders, NJ (US);
Walter R. M. Stepko, Clover, SC (US);
Edward Semenas, Allentown, PA (US);
II-VI Incorporated, Saxonburg, PA (US);
Abstract
A crystal is sublimation grown in a crucible by way of a temperature gradient in the presence of between 1 and 200 Torr of inert gas. The pressure of the inert gas is then increased to between 300 and 600 Torr, while the temperature gradient is maintained substantially constant. The temperature gradient is then reduced and the temperature in the crucible is increased sufficiently to anneal the crystal. Following cooling and removal from the crucible, the crystal is heated in the presence of oxygen in an enclosure to a temperature sufficient to remove unwanted material from the crystal. Following cooling and removal from the enclosure, the crystal surrounded by another instance of the source material is heated in a crucible in the presence 200 and 600 Torr of inert gas to a temperature sufficient to anneal the crystal.