The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Nov. 28, 2006
Hidehiko Okuda, Tokyo, JP;
Akihiko Endo, Tokyo, JP;
Tatsumi Kusaba, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
There is provided a layer transferred wafer subjected to a process for regenerating to be reused many times for an SOI layer wafer which is used to manufacture an SOI wafer with an excellent process yield in which oxygen precipitate nuclei or oxygen precipitates are eliminated and generation of HF defects are inhibited by performing the process for regenerating the layer transferred wafer generated as a by-product by an ion implantation separation method. The process for regenerating a layer transferred wafer in which the layer transferred waferobtained as a by-product in manufacturing a bonded SOI waferby an ion implantation separation method so as to be reused for an SOI layer waferof the bonded SOI wafercomprises: rapidly heating the layer transferred waferin an oxidizing atmosphere, then holding it for a fixed time and subsequently rapidly cooling it; and mirror-polishing a surface of the layer transferred wafer