The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Aug. 31, 2006
Applicants:

Lawrence C. West, San Jose, CA (US);

Gregory L. Wojcik, Ben Lomond, CA (US);

Francisco A. Leon, Palo Alto, CA (US);

Yonah Cho, Sunnyvale, CA (US);

Andreas Goebel, Mountain View, CA (US);

Inventors:

Lawrence C. West, San Jose, CA (US);

Gregory L. Wojcik, Ben Lomond, CA (US);

Francisco A. Leon, Palo Alto, CA (US);

Yonah Cho, Sunnyvale, CA (US);

Andreas Goebel, Mountain View, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/10 (2006.01); G02B 6/13 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.


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