The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Jun. 20, 2007
Applicants:

Tatsunori Murata, Chiyoda-ku, JP;

Koyu Asai, Chiyoda-ku, JP;

Hiroaki Iuchi, Itami, JP;

Inventors:

Tatsunori Murata, Chiyoda-ku, JP;

Koyu Asai, Chiyoda-ku, JP;

Hiroaki Iuchi, Itami, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

When microfabrication is done, a reliable semiconductor device is offered. A semiconductor device has a semiconductor substrate which has a main front surface, a plurality of convex patterns formed on the main front surface of a semiconductor substrate so that each might have a floating gate and a control gate, a first insulating film formed so that the upper surface and the side surface of each of a plurality of convex patterns might be covered, and so that width might become large rather than the portion which covers the lower part side surface of a convex pattern in the portion which covers an upper part side surface, and a second insulating film that covers the upper surface and the side surface of the first insulating film so that the cavity between the adjacent convex patterns may be occluded. The position occluded by the second insulating film of a cavity is a position higher than the upper surface of a floating gate, and is a position lower than the upper surface of a control gate.


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