The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Sep. 22, 2004
Taketo Kumon, Yokohama, JP;
Toshifumi Kageyama, Yokosuka, JP;
Atsuko Kimura, Tokyo, JP;
Toshio Sugizaki, Yokohama, JP;
Osamu Moriya, Yokohama, JP;
Taketo Kumon, Yokohama, JP;
Toshifumi Kageyama, Yokosuka, JP;
Atsuko Kimura, Tokyo, JP;
Toshio Sugizaki, Yokohama, JP;
Osamu Moriya, Yokohama, JP;
Lintec Corporation, Tokyo, JP;
Abstract
The present invention provides a process for producing a polysilsesquioxane graft polymer (1) which includes applying ionizing radiation or heat to a mixture including a polysilsesquioxane compound (2) and a vinyl compound (3), a polysilsesquioxane compound including an iniferter group, and a pressure-sensitive adhesive and a pressure-sensitive adhesive sheet using the polymer. According to the present invention, a process for producing a polysilsesquioxane graft polymer which may be used as a pressure-sensitive adhesive exhibiting excellent heat resistance and cohesive force, and the like are provided. In the formula, A represents a linking group, Rrepresents a hydrocarbon group which may have a substituent, Rrepresents a hydrogen atom or the like, Rrepresents a polar group or the like, Rrepresents a hydrogen atom or the like, kto krepresent arbitrary positive integers, 1 to n represent zero or an arbitrary positive integer (excluding the case where 'm=n=0'), and Q represents an iniferter group.