The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
May. 10, 2007
Jeng-ho Wang, Hsin-Chu, TW;
Jeng-Ho Wang, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for fabricating an inductor structure or a dual damascene structure includes following steps. First, a dielectric layer is provided. Subsequently, a first etching process is performed on the dielectric layer so as to form a first opening in the dielectric layer. A polymer is also formed in the first opening during the first etching process. Next, a polymer-removing step is performed to remove the polymer. Thereafter, a second etching process is performed on the dielectric layer to form a second opening in the dielectric layer. Furthermore, the first opening and the second opening are filled with a conductive material so as to form an inductor structure or a dual damascene structure.