The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Jun. 07, 2007
Haoren Zhuang, Hopewell Junction, NY (US);
Helen Wang, LaGrangeville, NY (US);
Len Yuan Tsou, New City, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Helen Wang, LaGrangeville, NY (US);
Len Yuan Tsou, New City, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Infineon Technologies AG, Neubiberg, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for manufacturing semiconductor devices are disclosed. In a preferred embodiment, a method of processing a semiconductor device includes providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon. A hard mask is formed over the material layer. A first pattern is formed in the hard mask and an upper portion of the material layer using a first etch process. A second pattern is formed in the hard mask and the upper portion of the material layer using a second etch process, the second pattern being different than the first pattern. The first pattern and the second pattern are formed in a lower portion of the material layer using a third etch process and using the hard mask as a mask.