The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Dec. 14, 2006
Applicants:

Hyeoung-won Seo, Gyeonggi-do, KR;

Jae-man Yoon, Seoul, KR;

Dong-gun Park, Gyeonggi-do, KR;

Seong-goo Kim, Seoul, KR;

Inventors:

Hyeoung-won Seo, Gyeonggi-do, KR;

Jae-man Yoon, Seoul, KR;

Dong-gun Park, Gyeonggi-do, KR;

Seong-goo Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of manufacturing a semiconductor device include forming a matrix of active pillars including a channel part on a substrate. Channel dopant regions are formed in the channel parts of the active pillars. Gate electrodes are formed on an outer surface of the channel parts that surround the channel dopant regions. The matrix of active pillars may be arranged in rows in a first direction and in columns in a second direction crossing the first direction on the substrate.


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