The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Oct. 25, 2006
Applicants:

Shouichi Terada, Koshi, JP;

Tsuyoshi Mizuno, Koshi, JP;

Takeshi Uehara, Koshi, JP;

Inventors:

Shouichi Terada, Koshi, JP;

Tsuyoshi Mizuno, Koshi, JP;

Takeshi Uehara, Koshi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05C 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.


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