The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jun. 18, 2007
Toru Fujioka, Tokyo, JP;
Toshihiko Shimizu, Tokyo, JP;
Masami Ohnishi, Hachioji, JP;
Hidetoshi Matsumoto, Kokubunji, JP;
Satoshi Tanaka, Kokubunji, JP;
Toru Fujioka, Tokyo, JP;
Toshihiko Shimizu, Tokyo, JP;
Masami Ohnishi, Hachioji, JP;
Hidetoshi Matsumoto, Kokubunji, JP;
Satoshi Tanaka, Kokubunji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The RF power amplifier includes first and second amplifiers Qand Qas final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Qand Qare formed on one semiconductor chip. The first bias voltage Vgof the amplifier Qis set to be higher than the second bias voltage Vgof the amplifier Qso that the amplifier Qis operational between Class B and AB, and Qis operational in Class C. The first effective device size Wgqof the amplifier Qis intentionally set to be smaller than the second effective device size Wgqof the amplifier Qbeyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.