The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Jan. 26, 2009
Michael P Chudzik, Danbury, CT (US);
Michael a Gribelyuk, Stamford, CT (US);
Rashmi Jha, Toledo, OH (US);
Renee T MO, Briarcliff Manor, NY (US);
Naim Moumen, Walden, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Michael P Chudzik, Danbury, CT (US);
Michael A Gribelyuk, Stamford, CT (US);
Rashmi Jha, Toledo, OH (US);
Renee T Mo, Briarcliff Manor, NY (US);
Naim Moumen, Walden, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal gate and high-k dielectric device includes a substrate, an interfacial layer on top of the substrate, a high-k dielectric layer on top of the interfacial layer, a metal film on top of the high-k dielectric layer, a cap layer on top of the metal film and a metal gate layer on top of the cap layer. The thickness of the metal film and the thickness of the cap layer are tuned such that a target concentration of a cap layer material is present at an interface of the metal film and the high-k dielectric layer.