The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
May. 29, 2008
Applicants:
Huilong Zhu, Poughkeepsie, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Huajie Chen, Danbury, CT (US);
Inventors:
Huilong Zhu, Poughkeepsie, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Huajie Chen, Danbury, CT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A structure comprises at least one transistor on a substrate, an insulator layer over the transistor, and an ion stopping layer over the insulator layer. The ion stopping layer comprises a portion of the insulator layer that is damaged and has either argon ion damage or nitrogen ion damage.