The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Sep. 06, 2007
Kiwamu Sakuma, Yokohama, JP;
Daisuke Matsushita, Hiratsuka, JP;
Koichi Kato, Yokohama, JP;
Yasushi Nakasaki, Yokohama, JP;
Izumi Hirano, Yokohama, JP;
Kouichi Muraoka, Sagamihara, JP;
Yuichiro Mitani, Kanagawa-Ken, JP;
Shigeto Fukatsu, Yokohama, JP;
Toshihide Ito, Tokyo, JP;
Kiwamu Sakuma, Yokohama, JP;
Daisuke Matsushita, Hiratsuka, JP;
Koichi Kato, Yokohama, JP;
Yasushi Nakasaki, Yokohama, JP;
Izumi Hirano, Yokohama, JP;
Kouichi Muraoka, Sagamihara, JP;
Yuichiro Mitani, Kanagawa-Ken, JP;
Shigeto Fukatsu, Yokohama, JP;
Toshihide Ito, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.