The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2010

Filed:

Mar. 31, 2008
Applicants:

Ute Drechsler, Rueschlikon, CH;

Urs T. Duerig, Rueschlikon, CH;

Jane Elizabeth Frommer, San Jose, CA (US);

Bernd W. Gotsmann, Horgen, CH;

James Lupton Hedrick, Pleasanton, CA (US);

Armin W. Knoll, Adliswil, DE;

Tobias Kraus, Zurich, CH;

Robert Dennis Miller, San Jose, CA (US);

Inventors:

Ute Drechsler, Rueschlikon, CH;

Urs T. Duerig, Rueschlikon, CH;

Jane Elizabeth Frommer, San Jose, CA (US);

Bernd W. Gotsmann, Horgen, CH;

James Lupton Hedrick, Pleasanton, CA (US);

Armin W. Knoll, Adliswil, DE;

Tobias Kraus, Zurich, CH;

Robert Dennis Miller, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/312 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the protection layer; (d) exposing the photoresist layer to actinic radiation and developing the photoresist layer to form a patterned photoresist layer, thereby exposing regions of the protection layer; (e) etching through the protection layer and the polymeric layer where the protection layer is not protected by the patterned photoresist layer; (f) removing the patterned photoresist layer in a first removal process; and (g) removing the protection layer in a second removal process different from the first removal process.


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