The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2010

Filed:

Sep. 06, 2006
Applicants:

Robert T. Rasmussen, Boise, ID (US);

Jim R. Baugh, Boise, ID (US);

Inventors:

Robert T. Rasmussen, Boise, ID (US);

Jim R. Baugh, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20-30 nanometers or more.


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