The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jun. 02, 2006
Jie Chen, Saratoga, CA (US);
Peijun Ding, Saratoga, CA (US);
Suraj Rengarajan, San Jose, CA (US);
Ling Chen, Sunnyvale, CA (US);
Tram Vo, Milpitas, CA (US);
Jie Chen, Saratoga, CA (US);
Peijun Ding, Saratoga, CA (US);
Suraj Rengarajan, San Jose, CA (US);
Ling Chen, Sunnyvale, CA (US);
Tram Vo, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.