The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
May. 19, 2008
David G. Farber, Austin, TX (US);
Fred Hause, Austin, TX (US);
Markus Lenski, Dresden, DE;
Anthony C. Mowry, Buda, TX (US);
David G. Farber, Austin, TX (US);
Fred Hause, Austin, TX (US);
Markus Lenski, Dresden, DE;
Anthony C. Mowry, Buda, TX (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A method that includes forming a gate of a semiconductor device on a substrate, and etching sidewall spacers on sides of the gate to provide a proximity value, where the proximity value is defined as a distance between the gate and an edge of a performance-enhancing region. The sidewall spacers are used to define the edge of the region during formation of the region in the substrate. The method also includes pre-cleaning the gate and the substrate in preparation for formation of the region, where the etching and the pre-cleaning are performed in a continuous vacuum.