The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Oct. 25, 2007
Ching-ho Yang, Hsinchu, TW;
Jung-ching Chen, Hsinchu, TW;
Shyan-yhu Wang, Hsinchu County, TW;
Shang-chi Wu, Hsinchu, TW;
Ching-Ho Yang, Hsinchu, TW;
Jung-Ching Chen, Hsinchu, TW;
Shyan-Yhu Wang, Hsinchu County, TW;
Shang-Chi Wu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d. R=d/d, where 0.15≦R≦0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.