The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2010
Filed:
Mar. 09, 2006
Jiro Yugami, Chiyoda-ku, JP;
Masao Inoue, Chiyoda-ku, JP;
Kenichi Mori, Chiyoda-ku, JP;
Shinsuke Sakashita, Chiyoda-ku, JP;
Jiro Yugami, Chiyoda-ku, JP;
Masao Inoue, Chiyoda-ku, JP;
Kenichi Mori, Chiyoda-ku, JP;
Shinsuke Sakashita, Chiyoda-ku, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.