The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2010

Filed:

Jul. 08, 2004
Applicants:

Hiromoto Ii, Hachioji, JP;

Toshio Tsuji, Hachioji, JP;

Chikao Mamiya, Hachioji, JP;

Kazuhiro Fukuda, Hachioji, JP;

Kiyoshi Oishi, Hachioji, JP;

Takakazu Kiyomura, Hiroshima, JP;

Inventors:

Hiromoto Ii, Hachioji, JP;

Toshio Tsuji, Hachioji, JP;

Chikao Mamiya, Hachioji, JP;

Kazuhiro Fukuda, Hachioji, JP;

Kiyoshi Oishi, Hachioji, JP;

Takakazu Kiyomura, Hiroshima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.


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