The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
May. 21, 2007
Jin-ping Han, Fishkill, NY (US);
Henry Utomo, Newburgh, NY (US);
O Sung Kwon, Wappingers Falls, NY (US);
OH Jung Kwon, Hopewell Junction, NY (US);
Judson Robert Holt, Wappingers Falls, NY (US);
Thomas N. Adam, Poughkeepsie, NY (US);
Jin-Ping Han, Fishkill, NY (US);
Henry Utomo, Newburgh, NY (US);
O Sung Kwon, Wappingers Falls, NY (US);
Oh Jung Kwon, Hopewell Junction, NY (US);
Judson Robert Holt, Wappingers Falls, NY (US);
Thomas N. Adam, Poughkeepsie, NY (US);
Infineon Technologies AG, Neubiberg, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material.