The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Oct. 30, 2006
Edward Dennis Adams, Richmond, VA (US);
Jay Sanford Burnham, Fletcher, VT (US);
Evgeni Gousev, Saratoga, CA (US);
James Spiros Nakos, Essex Junction, VT (US);
Heather Elizabeth Preuss, Milton, VT (US);
Joseph Francis Shepard, Jr., Poughkeepsie, NY (US);
Edward Dennis Adams, Richmond, VA (US);
Jay Sanford Burnham, Fletcher, VT (US);
Evgeni Gousev, Saratoga, CA (US);
James Spiros Nakos, Essex Junction, VT (US);
Heather Elizabeth Preuss, Milton, VT (US);
Joseph Francis Shepard, Jr., Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.