The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Feb. 22, 2007
Tae Won Kim, San Jose, CA (US);
Kyeong-tae Lee, San Jose, CA (US);
Alexander Paterson, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Shashank C. Deshmukh, San Jose, CA (US);
Tae Won Kim, San Jose, CA (US);
Kyeong-Tae Lee, San Jose, CA (US);
Alexander Paterson, San Jose, CA (US);
Valentin N. Todorow, Palo Alto, CA (US);
Shashank C. Deshmukh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.