The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Feb. 09, 2007
Akihisa Shimomura, Atsugi, JP;
Kenji Kasahara, Tsukuba, JP;
Aiko Shiga, Shibuya, JP;
Hidekazu Miyairi, Tochigi, JP;
Koichiro Tanaka, Atsugi, JP;
Koji Dairiki, Isehara, JP;
Akihisa Shimomura, Atsugi, JP;
Kenji Kasahara, Tsukuba, JP;
Aiko Shiga, Shibuya, JP;
Hidekazu Miyairi, Tochigi, JP;
Koichiro Tanaka, Atsugi, JP;
Koji Dairiki, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, unknown;
Abstract
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.