The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2010

Filed:

Jul. 22, 2008
Applicants:

Martin Beaumier, Quebec, CA;

Mohamed Belazzouz, Quebec, CA;

Peter J Brofman, Hopewell Junction, NY (US);

David L Edwards, Poughkeepsie, NY (US);

Kamal K Sikka, Poughkeepsie, NY (US);

Jiantao Zheng, Beacon, NY (US);

Jeffrey a Zitz, Poughkeepsie, NY (US);

Inventors:

Martin Beaumier, Quebec, CA;

Mohamed Belazzouz, Quebec, CA;

Peter J Brofman, Hopewell Junction, NY (US);

David L Edwards, Poughkeepsie, NY (US);

Kamal K Sikka, Poughkeepsie, NY (US);

Jiantao Zheng, Beacon, NY (US);

Jeffrey A Zitz, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 7/20 (2006.01); H01L 23/12 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method attaches a semiconductor chip to a substrate, applies a thermal interface material to a top of the semiconductor chip, and positions a lid over the semiconductor chip typically attached to the substrate with an adhesive. The method applies a force near the distal ends of the lid or substrate to cause a center portion of the lid or substrate to bow away from the semiconductor chip and increases the central thickness of the thermal interface material prior to curing. While the center portion of the lid or substrate is bowed away from the semiconductor chip, the thermal interface material method increases the temperature of the assembly, thus curing the thermal interface material and lid adhesive. After the thermal interface material has and adhesive have cured, the method removes the force from near the distal ends of the lid or substrate to cause the center portion of the lid to return to a position closer to the semiconductor chip, creating a residual compressive stress in the thermal interface material thus improving thermal performance and thermal reliability.


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