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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7732925 B1

PDFFull Text
Date of Patent:
Jun. 08, 2010

Filed:

Feb. 11, 2005

Semiconductor device and manufacturing method thereof

Applicants:

Yoshio Okayama, Brookline, MA (US);

Akira Suzuki, Ota, JP;

Koujiro Kameyama, Ota, JP;

Mitsuo Umemoto, Gunma, JP;

Kenji Takahashi, Tokyo, JP;

Hiroshi Terao, Tokyo, JP;

Masataka Hoshino, Kawasaki, JP;

Inventors:

Yoshio Okayama, Brookline, MA (US);

Akira Suzuki, Ota, JP;

Koujiro Kameyama, Ota, JP;

Mitsuo Umemoto, Gunma, JP;

Kenji Takahashi, Tokyo, JP;

Hiroshi Terao, Tokyo, JP;

Masataka Hoshino, Kawasaki, JP;

Assignees:

SANYO Electric Co., Ltd., Osaka, JP;

Kabushiki Kaisha Toshiba, Tokyo, JP;

Fujitsu Microelectronics Limited, Tokyo, JP;

NEC Corporation, Tokyo, JP;

Attorney:

Morrison & Foerster LLP

Primary Examiner:

Bradley K Smith

Assistant Examiner:

Amar Movva

Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Find Patent Forward Citations

Okayama, Yoshio. (2010). Semiconductor device and manufacturing method thereof (U.S. Patent No. 7732925). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7732925

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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