The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Feb. 11, 2005
Yoshio Okayama, Brookline, MA (US);
Akira Suzuki, Ota, JP;
Koujiro Kameyama, Ota, JP;
Mitsuo Umemoto, Gunma, JP;
Kenji Takahashi, Tokyo, JP;
Hiroshi Terao, Tokyo, JP;
Masataka Hoshino, Kawasaki, JP;
Yoshio Okayama, Brookline, MA (US);
Akira Suzuki, Ota, JP;
Koujiro Kameyama, Ota, JP;
Mitsuo Umemoto, Gunma, JP;
Kenji Takahashi, Tokyo, JP;
Hiroshi Terao, Tokyo, JP;
Masataka Hoshino, Kawasaki, JP;
SANYO Electric Co., Ltd., Osaka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.