The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
May. 01, 2007
Yihwan Kim, Milpitas, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Yonah Cho, Santa Clara, CA (US);
Zhiyuan YE, San Jose, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Errol Sanchez, Tracy, CA (US);
Yihwan Kim, Milpitas, CA (US);
Majeed A. Foad, Sunnyvale, CA (US);
Yonah Cho, Santa Clara, CA (US);
Zhiyuan Ye, San Jose, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Errol Sanchez, Tracy, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.