The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Oct. 20, 2008
Applicants:
Edita Tejnil, San Carlos, CA (US);
Yan Borodovsky, Portland, OR (US);
Inventors:
Edita Tejnil, San Carlos, CA (US);
Yan Borodovsky, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/14 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.