The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2010

Filed:

Feb. 21, 2006
Applicants:

Matt Yeh, Hsinchun, TW;

Shun Wu Lin, Taichung, TW;

Chi-chun Chen, Kaohsiung, TW;

Shih-chang Chen, Hsin-Chu, TW;

Inventors:

Matt Yeh, Hsinchun, TW;

Shun Wu Lin, Taichung, TW;

Chi-Chun Chen, Kaohsiung, TW;

Shih-Chang Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A cleaning sequence usable in semiconductor manufacturing efficiently cleans semiconductor substrates while preventing chemical oxide formation thereon. The sequence includes the sequence of: 1) treating with an HF solution; 2) treating with pure HSO; 3) treating with an HOsolution; 4) a DI water rinse; and 5) treatment with an HCl solution. The pure HSOsolution may include an HSOconcentration of about ninety-eight percent (98%) or greater. After the HCl solution treatment, the cleaned surface may be a silicon surface that is free of a chemical oxide having a thickness of 5 angstroms or greater. The invention finds particular advantage in semiconductor devices that utilize multiple gate oxide thicknesses.


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