The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
May. 29, 2006
Hiroshi Kanemaru, Miyazaki, JP;
Naoki Kumagai, Nagano, JP;
Yuichi Harada, Nagano, JP;
Yoshihiro Ikura, Nagano, JP;
Yoshiaki Minoya, Nagano, JP;
Hiroshi Kanemaru, Miyazaki, JP;
Naoki Kumagai, Nagano, JP;
Yuichi Harada, Nagano, JP;
Yoshihiro Ikura, Nagano, JP;
Yoshiaki Minoya, Nagano, JP;
Abstract
The shape of a tip of an insulating material of an insulating isolation region is provided as being a concave one recessed below the back surface of an n-semiconductor substrate. This reduces the electric field strength at the corner at which the bottom of the n-semiconductor substrate is in contact with the insulating isolation region to allow an excellent breakdown voltage to be obtained. Moreover, by forming a high impurity concentration region such as a field-stop layer on the back surface of the n-semiconductor substrate, a depletion layer extending from the top surface is prevented from reaching the back surface. This eliminates an influence of a surface state introduced in the interface between the insulator film formed on the back surface and the n-semiconductor substrate, by which an excellent breakdown voltage can be obtained.