The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7723785 B1

PDF
Full Text
Expired
Date of Patent:
May. 25, 2010

Filed:

Jul. 31, 2007
Applicants:

Yu Wen Chen, Baoshan Township, Hsinchu County, TW;

Fu-hsin Chen, Jhudong Township, Hsinchu County, TW;

Tsung-yi Huang, Hsin-Chu, TW;

Yt Tsai, Sinpu Township, Hsinchu County, TW;

Inventors:

Yu Wen Chen, Baoshan Township, Hsinchu County, TW;

Fu-Hsin Chen, Jhudong Township, Hsinchu County, TW;

Tsung-Yi Huang, Hsin-Chu, TW;

Yt Tsai, Sinpu Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a source region and a drain region disposed in a substrate wherein the source and drain regions have a first type of dopant; a gate electrode formed on the substrate interposed laterally between the source and drain regions; a gate spacer disposed on the substrate and laterally between the source region and the gate electrode, adjacent a side of the gate electrode; and a conductive feature embedded in the gate spacer.


Find Patent Forward Citations

Chen, Yu. (2010). High performance power mos structure (U.S. Patent No. 7723785). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7723785

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