The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Jun. 10, 2005
Masaru Kurihara, Kawasaki, JP;
Masaru Izawa, Hino, JP;
Masaru Kurihara, Kawasaki, JP;
Masaru Izawa, Hino, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
After a polycrystalline silicon film () is formed on a semiconductor substrate via an insulating film for a gate insulating film (step S), an organic antireflection film () is formed on the polycrystalline silicon film () (step S), and a resist pattern () is formed on the antireflection film () (step S). Then, a passivation film () is deposited on the antireflection film () so as to cover the resist pattern () by plasma using fluorocarbon gas while a bias voltage is being applied to the semiconductor substrate (step S). Then, the passivation film () and the antireflection film () are etched by plasma using gas containing oxygen gas (step S). Thereafter, the polycrystalline silicon film () is etched using the resist pattern () with reduced line edge roughness as an etching mask to form a gate electrode (step S).