The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
May. 27, 2008
Applicants:
Xiying Chen, San Jose, CA (US);
Chuanbin Pan, San Jose, CA (US);
Tanmay Kumar, Pleasanton, CA (US);
Er-xuan Ping, Fremont, CA (US);
Inventors:
Xiying Chen, San Jose, CA (US);
Chuanbin Pan, San Jose, CA (US);
Tanmay Kumar, Pleasanton, CA (US);
Er-Xuan Ping, Fremont, CA (US);
Assignee:
SanDisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making a non-volatile memory device includes forming a first electrode, forming a steering element, forming at least one feature, forming a carbon resistivity switching material on at least one sidewall of the at least one feature such that the carbon resistivity switching material electrically contacts the steering element, and forming a second electrode.