The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2010

Filed:

Oct. 26, 2005
Applicants:

Kuei Shun Chen, Hsin-Chu, TW;

Chin-hsiang Lin, Hsin-Chu, TW;

Tsai-cheng Gau, HsinChu, TW;

Chun-kung Chen, Hsin-Chu, TW;

Hsiao-tzu LU, Hsinchu, TW;

Fu-jye Liang, Kaohsiung, TW;

Inventors:

Kuei Shun Chen, Hsin-Chu, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Tsai-Cheng Gau, HsinChu, TW;

Chun-Kung Chen, Hsin-Chu, TW;

Hsiao-Tzu Lu, Hsinchu, TW;

Fu-Jye Liang, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for photolithography in semiconductor manufacturing includes providing a substrate for a wafer and providing a mask for exposing the wafer. The wafer is exposed by utilizing a combination of high angle illumination and focus drift exposure methods.


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