The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Sep. 16, 2004
Fuminori Hasegawa, Yamanashi, JP;
Tadanori Yoshioka, Tokyo, JP;
Fuminori Hasegawa, Yamanashi, JP;
Tadanori Yoshioka, Tokyo, JP;
JEOL Ltd., Tokyo, JP;
JEOL Engineering Co., Ltd., Tokyo, JP;
Abstract
Apparatus and method capable of preparing samples adapted for observations by electron microscopy. Each sample is ion-etched. During this process, the sample stage is tilted reciprocably left and right about a tilting axis. The sample is ion-etched together with a shielding material. The sample may contain a substance that is not easily etched by the ion beam. In the present invention, such unetched portions are not produced in spite of the presence of the substance. The substance can be separated from the sample. The ion beam is directed at the sample with the boundary defined by an end surface of the shielding material. Portions of the sample at a processing position and its vicinities are etched by the beam.