The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Feb. 21, 2007
Ilija Dukovski, Newtonville, MA (US);
Robert John Stephenson, Newton Upper Falls, MA (US);
Jean Augustin Chan Sow Fook Yiptong, Worchester, MA (US);
Samed Halilov, Waltham, MA (US);
Robert J. Mears, Wellesley, MA (US);
Xiangyang Huang, Waltham, MA (US);
Marek Hytha, Brookline, MA (US);
Ilija Dukovski, Newtonville, MA (US);
Robert John Stephenson, Newton Upper Falls, MA (US);
Jean Augustin Chan Sow Fook Yiptong, Worchester, MA (US);
Samed Halilov, Waltham, MA (US);
Robert J. Mears, Wellesley, MA (US);
Xiangyang Huang, Waltham, MA (US);
Marek Hytha, Brookline, MA (US);
Mears Technologies, Inc., Waltham, MA (US);
Abstract
A semiconductor device may include a first monocrystalline layer comprising a first material having a first lattice constant. A second monocrystalline layer may include a second material having a second lattice constant different than the first lattice constant. The device may also include a lattice matching layer between the first and second monocrystalline layers and comprising a superlattice. The superlattice may include a plurality of groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween.