The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
May. 10, 2006
Naoto Tsuji, Tama, JP;
Kiyohiro Matsushita, Tama, JP;
Satoshi Takahashi, Tama, JP;
Nathan Kameling, Tama, JP;
Naoto Tsuji, Tama, JP;
Kiyohiro Matsushita, Tama, JP;
Satoshi Takahashi, Tama, JP;
Nathan Kameling, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 μm/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing plural cross-linkable groups, (ii) a cross-linking gas, (iii) an inert gas, and optionally (iv) an oxygen-supplying gas, wherein a flow rate of the oxygen-supplying gas is no more than 25% of that of the source gas; and subjecting the insulation film to an integration process to fabricate a semiconductor device.