The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Dec. 01, 2008
Chien-li Kuo, Hsinchu, TW;
Fu-chao Liu, Taoyuan County, TW;
Chun-liang Hou, Hsinchu County, TW;
Min-chin Hsieh, Hsinchu County, TW;
Chien-Li Kuo, Hsinchu, TW;
Fu-Chao Liu, Taoyuan County, TW;
Chun-Liang Hou, Hsinchu County, TW;
Min-Chin Hsieh, Hsinchu County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsinchu, TW;
Abstract
An operating voltage tuning method for a static random access memory is disclosed. The static random access memory receives a periphery voltage and a memory cell voltage. The steps of the method mentioned above are shown as follows. First, perform a shmoo test on the static random access memory to obtain a shmoo test plot and a minimum operating voltage. Compare the minimum operating voltage with a preset specification. Position a specification position point on the line which the periphery voltage is equal to the memory cell voltage in the shmoo test plot corresponding to the preset specification. Fix one of the memory cell voltage and the periphery voltage and gradually decrease the other to test the static random access memory and obtain a failure bits distribution. Finally, tune process parameters of the static random access memory according to the specification position point and the failure bits distribution.