The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
May. 07, 2007
Chia-der Chang, Hsinchu, TW;
Yu-ching Chang, Hsinchu, TW;
Chien-chih Chou, Jubei, TW;
Yi-tung Yen, Hsinchu, TW;
Chia-Der Chang, Hsinchu, TW;
Yu-Ching Chang, Hsinchu, TW;
Chien-Chih Chou, Jubei, TW;
Yi-Tung Yen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconducting substrate having CMOS transistors thereon. A composite etch stop layer including a lowermost silicon oxynitride portion and an uppermost silicon nitride portion is disposed on the semiconducting substrate including the CMOS transistors. At least one dielectric layer is on the composite etch stop layer. A first contact opening extends to a first level through the composite etch stop layer thickness and a second contact opening extends to a second level deeper than the first level through the composite etch stop layer.